Bulldog IT – 400001 – RAM-DRAM

Summary Info

Total Memory Size – 64 GBytes

Memory Module(s)

  1. Module Number – 0
    Module Size – 8 GBytes
    Memory Type – DDR4 SDRAM
    Memory Speed – 1200.0 MHz (DDR4-2400 / PC4-19200)
  2. Module Number – 4
    Module Size – 8 GBytes
    Memory Type – DDR4 SDRAM
    Memory Speed – 1200.0 MHz (DDR4-2400 / PC4-19200)
  3. Module Number – 8
    Module Size – 8 GBytes
    Memory Type – DDR4 SDRAM
    Memory Speed – 1200.0 MHz (DDR4-2400 / PC4-19200)
  4. Module Number – 12
    Module Size -8 GBytes
    Memory Type – DDR4 SDRAM
    Memory Speed – 1200.0 MHz (DDR4-2400 / PC4-19200)
  5. Module Number – 32
    Module Size – 8 GBytes
    Memory Type – DDR4 SDRAM
    Memory Speed – 1200.0 MHz (DDR4-2400 / PC4-19200)
  6. Module Number – 36
    Module Size – 8 GBytes
    Memory Type – DDR4 SDRAM
    Memory Speed – 1200.0 MHz (DDR4-2400 / PC4-19200)
  7. Module Number – 40
    Module Size – 8 GBytes
    Memory Type – DDR4 SDRAM
    Memory Speed – 1200.0 MHz (DDR4-2400 / PC4-19200)
  8. Module Number – 44
    Module Size – 8 GBytes
    Memory Type – DDR4 SDRAM
    Memory Speed – 1200.0 MHz (DDR4-2400 / PC4-19200)

Full Item Description

Bulldog IT – Report
BulldogIT.co.uk
Content:
  • Memory


    • BULLDOGIT-CO-UK
    [Current Computer]
    [Operating System]


    Memory
    [General Information]
    Total Memory Size:64 GBytes
    Total Memory Size [MB]:65536
    [Current Performance Settings]
    Maximum Supported Memory Clock:1066.7 MHz
    Current Memory Clock:1064.2 MHz
    Current Timing (tCAS-tRCD-tRP-tRAS):15-15-15-35
    Memory Channels Supported:4
    Memory Channels Active:4
    Command Rate (CR):1T
    Read to Read Delay (tRDRD_DG/TrdrdScDlr) Different Bank Group:1T
    Read to Read Delay (tRDRD_DD) Different DIMM:1T
    Write to Write Delay (tWRWR_DG/TwrwrScDlr) Different Bank Group:3T
    Write to Write Delay (tWRWR_DD) Different DIMM:3T
    Read to Write Delay (tRDWR_DD) Different DIMM:2T
    Write to Read Delay (tWRRD_DG/TwrrdScDlr) Different Bank Group:1T
    Write to Read Delay (tWRRD_DD) Different DIMM:2T
    Read to Precharge Delay (tRTP):8T
    Write to Precharge Delay (tWTP):27T
    Write Recovery Time (tWR):16T
    RAS# to RAS# Delay (tRRD_S):4T
    Refresh Cycle Time (tRFC):374T
    Four Activate Window (tFAW):23T


    Row: 0 [CPU0/CPU0-DIMM8] – 8 GB PC4-19200 DDR4 SDRAM SK Hynix HMA81GR7MFR8N-UH
    [General Module Information]
    Module Number:0
    Module Size:8 GBytes
    Memory Type:DDR4 SDRAM
    Module Type:Registered DIMM (RDIMM)
    Memory Speed:1200.0 MHz (DDR4-2400 / PC4-19200)
    Module Manufacturer:SK Hynix
    Module Part Number:HMA81GR7MFR8N-UH
    Module Revision:0.0
    Module Serial Number:3986493778 (52119DED)
    Module Manufacturing Date:Year: 2017, Week: 40
    Module Manufacturing Location:1
    SDRAM Manufacturer:SK Hynix
    Error Check/Correction:ECC
    [Module Characteristics]
    Row Address Bits:16
    Column Address Bits:10
    Module Density:8192 Mb
    Number Of Ranks:1
    Number Of Bank Groups:4
    Device Width:8 bits
    Bus Width:72 bits
    Die Count:1
    Module Nominal Voltage (VDD):1.2 V
    Minimum SDRAM Cycle Time (tCKAVGmin):0.83300 ns (1200 MHz)
    Maximum SDRAM Cycle Time (tCKAVGmax):1.60000 ns
    CAS# Latencies Supported:10, 11, 12, 13, 14, 15, 16, 17, 18
    Minimum CAS# Latency Time (tAAmin):13.750 ns
    Minimum RAS# to CAS# Delay (tRCDmin):13.750 ns
    Minimum Row Precharge Time (tRPmin):13.750 ns
    Minimum Active to Precharge Time (tRASmin):32.000 ns
    Supported Module Timing at 1200.0 MHz:17-17-17-39
    Supported Module Timing at 1066.7 MHz:15-15-15-35
    Supported Module Timing at 933.3 MHz:13-13-13-30
    Supported Module Timing at 800.0 MHz:11-11-11-26
    Supported Module Timing at 666.7 MHz:10-10-10-22
    Minimum Active to Active/Refresh Time (tRCmin):45.750 ns
    Minimum Refresh Recovery Time Delay (tRFC1min):350.000 ns
    Minimum Refresh Recovery Time Delay (tRFC2min):260.000 ns
    Minimum Refresh Recovery Time Delay (tRFC4min):160.000 ns
    Minimum Four Activate Window Delay Time (tFAWmin):21.000 ns
    Minimum Active to Active Delay Time – Different Bank Group (tRRD_Smin):3.300 ns
    Minimum Active to Active Delay Time – Same Bank Group (tRRD_Lmin):4.900 ns
    Minimum CAS to CAS Delay Time – Same Bank Group (tCCD_Lmin):5.000 ns
    [Features]
    Module Temperature Sensor (TSOD):Supported
    Module Nominal Height:31 – 32 mm
    Module Maximum Thickness (Front):1 – 2 mm
    Module Maximum Thickness (Back):1 – 2 mm
    Number of Registers:2
    Heat Spreader:Not Present
    Register Manufacturer:IDT
    Register Revision:3.0
    Address Mapping from Register to DRAM:Standard


    Row: 4 [CPU0/CPU0-DIMM6] – 8 GB PC4-19200 DDR4 SDRAM SK Hynix HMA81GR7MFR8N-UH
    [General Module Information]
    Module Number:4
    Module Size:8 GBytes
    Memory Type:DDR4 SDRAM
    Module Type:Registered DIMM (RDIMM)
    Memory Speed:1200.0 MHz (DDR4-2400 / PC4-19200)
    Module Manufacturer:SK Hynix
    Module Part Number:HMA81GR7MFR8N-UH
    Module Revision:0.0
    Module Serial Number:4154265938 (52119DF7)
    Module Manufacturing Date:Year: 2017, Week: 40
    Module Manufacturing Location:1
    SDRAM Manufacturer:SK Hynix
    Error Check/Correction:ECC
    [Module Characteristics]
    Row Address Bits:16
    Column Address Bits:10
    Module Density:8192 Mb
    Number Of Ranks:1
    Number Of Bank Groups:4
    Device Width:8 bits
    Bus Width:72 bits
    Die Count:1
    Module Nominal Voltage (VDD):1.2 V
    Minimum SDRAM Cycle Time (tCKAVGmin):0.83300 ns (1200 MHz)
    Maximum SDRAM Cycle Time (tCKAVGmax):1.60000 ns
    CAS# Latencies Supported:10, 11, 12, 13, 14, 15, 16, 17, 18
    Minimum CAS# Latency Time (tAAmin):13.750 ns
    Minimum RAS# to CAS# Delay (tRCDmin):13.750 ns
    Minimum Row Precharge Time (tRPmin):13.750 ns
    Minimum Active to Precharge Time (tRASmin):32.000 ns
    Supported Module Timing at 1200.0 MHz:17-17-17-39
    Supported Module Timing at 1066.7 MHz:15-15-15-35
    Supported Module Timing at 933.3 MHz:13-13-13-30
    Supported Module Timing at 800.0 MHz:11-11-11-26
    Supported Module Timing at 666.7 MHz:10-10-10-22
    Minimum Active to Active/Refresh Time (tRCmin):45.750 ns
    Minimum Refresh Recovery Time Delay (tRFC1min):350.000 ns
    Minimum Refresh Recovery Time Delay (tRFC2min):260.000 ns
    Minimum Refresh Recovery Time Delay (tRFC4min):160.000 ns
    Minimum Four Activate Window Delay Time (tFAWmin):21.000 ns
    Minimum Active to Active Delay Time – Different Bank Group (tRRD_Smin):3.300 ns
    Minimum Active to Active Delay Time – Same Bank Group (tRRD_Lmin):4.900 ns
    Minimum CAS to CAS Delay Time – Same Bank Group (tCCD_Lmin):5.000 ns
    [Features]
    Module Temperature Sensor (TSOD):Supported
    Module Nominal Height:31 – 32 mm
    Module Maximum Thickness (Front):1 – 2 mm
    Module Maximum Thickness (Back):1 – 2 mm
    Number of Registers:2
    Heat Spreader:Not Present
    Register Manufacturer:IDT
    Register Revision:3.0
    Address Mapping from Register to DRAM:Standard


    Row: 8 [CPU0/CPU0-DIMM1] – 8 GB PC4-19200 DDR4 SDRAM SK Hynix HMA81GR7MFR8N-UH
    [General Module Information]
    Module Number:8
    Module Size:8 GBytes
    Memory Type:DDR4 SDRAM
    Module Type:Registered DIMM (RDIMM)
    Memory Speed:1200.0 MHz (DDR4-2400 / PC4-19200)
    Module Manufacturer:SK Hynix
    Module Part Number:HMA81GR7MFR8N-UH
    Module Revision:0.0
    Module Serial Number:1654526290 (52119E62)
    Module Manufacturing Date:Year: 2017, Week: 40
    Module Manufacturing Location:1
    SDRAM Manufacturer:SK Hynix
    Error Check/Correction:ECC
    [Module Characteristics]
    Row Address Bits:16
    Column Address Bits:10
    Module Density:8192 Mb
    Number Of Ranks:1
    Number Of Bank Groups:4
    Device Width:8 bits
    Bus Width:72 bits
    Die Count:1
    Module Nominal Voltage (VDD):1.2 V
    Minimum SDRAM Cycle Time (tCKAVGmin):0.83300 ns (1200 MHz)
    Maximum SDRAM Cycle Time (tCKAVGmax):1.60000 ns
    CAS# Latencies Supported:10, 11, 12, 13, 14, 15, 16, 17, 18
    Minimum CAS# Latency Time (tAAmin):13.750 ns
    Minimum RAS# to CAS# Delay (tRCDmin):13.750 ns
    Minimum Row Precharge Time (tRPmin):13.750 ns
    Minimum Active to Precharge Time (tRASmin):32.000 ns
    Supported Module Timing at 1200.0 MHz:17-17-17-39
    Supported Module Timing at 1066.7 MHz:15-15-15-35
    Supported Module Timing at 933.3 MHz:13-13-13-30
    Supported Module Timing at 800.0 MHz:11-11-11-26
    Supported Module Timing at 666.7 MHz:10-10-10-22
    Minimum Active to Active/Refresh Time (tRCmin):45.750 ns
    Minimum Refresh Recovery Time Delay (tRFC1min):350.000 ns
    Minimum Refresh Recovery Time Delay (tRFC2min):260.000 ns
    Minimum Refresh Recovery Time Delay (tRFC4min):160.000 ns
    Minimum Four Activate Window Delay Time (tFAWmin):21.000 ns
    Minimum Active to Active Delay Time – Different Bank Group (tRRD_Smin):3.300 ns
    Minimum Active to Active Delay Time – Same Bank Group (tRRD_Lmin):4.900 ns
    Minimum CAS to CAS Delay Time – Same Bank Group (tCCD_Lmin):5.000 ns
    [Features]
    Module Temperature Sensor (TSOD):Supported
    Module Nominal Height:31 – 32 mm
    Module Maximum Thickness (Front):1 – 2 mm
    Module Maximum Thickness (Back):1 – 2 mm
    Number of Registers:2
    Heat Spreader:Not Present
    Register Manufacturer:IDT
    Register Revision:3.0
    Address Mapping from Register to DRAM:Standard


    Row: 12 [CPU0/CPU0-DIMM3] – 8 GB PC4-19200 DDR4 SDRAM SK Hynix HMA81GR7MFR8N-UH
    [General Module Information]
    Module Number:12
    Module Size:8 GBytes
    Memory Type:DDR4 SDRAM
    Module Type:Registered DIMM (RDIMM)
    Memory Speed:1200.0 MHz (DDR4-2400 / PC4-19200)
    Module Manufacturer:SK Hynix
    Module Part Number:HMA81GR7MFR8N-UH
    Module Revision:0.0
    Module Serial Number:1453199698 (52119E56)
    Module Manufacturing Date:Year: 2017, Week: 40
    Module Manufacturing Location:1
    SDRAM Manufacturer:SK Hynix
    Error Check/Correction:ECC
    [Module Characteristics]
    Row Address Bits:16
    Column Address Bits:10
    Module Density:8192 Mb
    Number Of Ranks:1
    Number Of Bank Groups:4
    Device Width:8 bits
    Bus Width:72 bits
    Die Count:1
    Module Nominal Voltage (VDD):1.2 V
    Minimum SDRAM Cycle Time (tCKAVGmin):0.83300 ns (1200 MHz)
    Maximum SDRAM Cycle Time (tCKAVGmax):1.60000 ns
    CAS# Latencies Supported:10, 11, 12, 13, 14, 15, 16, 17, 18
    Minimum CAS# Latency Time (tAAmin):13.750 ns
    Minimum RAS# to CAS# Delay (tRCDmin):13.750 ns
    Minimum Row Precharge Time (tRPmin):13.750 ns
    Minimum Active to Precharge Time (tRASmin):32.000 ns
    Supported Module Timing at 1200.0 MHz:17-17-17-39
    Supported Module Timing at 1066.7 MHz:15-15-15-35
    Supported Module Timing at 933.3 MHz:13-13-13-30
    Supported Module Timing at 800.0 MHz:11-11-11-26
    Supported Module Timing at 666.7 MHz:10-10-10-22
    Minimum Active to Active/Refresh Time (tRCmin):45.750 ns
    Minimum Refresh Recovery Time Delay (tRFC1min):350.000 ns
    Minimum Refresh Recovery Time Delay (tRFC2min):260.000 ns
    Minimum Refresh Recovery Time Delay (tRFC4min):160.000 ns
    Minimum Four Activate Window Delay Time (tFAWmin):21.000 ns
    Minimum Active to Active Delay Time – Different Bank Group (tRRD_Smin):3.300 ns
    Minimum Active to Active Delay Time – Same Bank Group (tRRD_Lmin):4.900 ns
    Minimum CAS to CAS Delay Time – Same Bank Group (tCCD_Lmin):5.000 ns
    [Features]
    Module Temperature Sensor (TSOD):Supported
    Module Nominal Height:31 – 32 mm
    Module Maximum Thickness (Front):1 – 2 mm
    Module Maximum Thickness (Back):1 – 2 mm
    Number of Registers:2
    Heat Spreader:Not Present
    Register Manufacturer:IDT
    Register Revision:3.0
    Address Mapping from Register to DRAM:Standard


    Row: 32 [CPU1/CPU1-DIMM1] – 8 GB PC4-19200 DDR4 SDRAM SK Hynix HMA81GR7MFR8N-UH
    [General Module Information]
    Module Number:32
    Module Size:8 GBytes
    Memory Type:DDR4 SDRAM
    Module Type:Registered DIMM (RDIMM)
    Memory Speed:1200.0 MHz (DDR4-2400 / PC4-19200)
    Module Manufacturer:SK Hynix
    Module Part Number:HMA81GR7MFR8N-UH
    Module Revision:0.0
    Module Serial Number:1688080722 (52119E64)
    Module Manufacturing Date:Year: 2017, Week: 40
    Module Manufacturing Location:1
    SDRAM Manufacturer:SK Hynix
    Error Check/Correction:ECC
    [Module Characteristics]
    Row Address Bits:16
    Column Address Bits:10
    Module Density:8192 Mb
    Number Of Ranks:1
    Number Of Bank Groups:4
    Device Width:8 bits
    Bus Width:72 bits
    Die Count:1
    Module Nominal Voltage (VDD):1.2 V
    Minimum SDRAM Cycle Time (tCKAVGmin):0.83300 ns (1200 MHz)
    Maximum SDRAM Cycle Time (tCKAVGmax):1.60000 ns
    CAS# Latencies Supported:10, 11, 12, 13, 14, 15, 16, 17, 18
    Minimum CAS# Latency Time (tAAmin):13.750 ns
    Minimum RAS# to CAS# Delay (tRCDmin):13.750 ns
    Minimum Row Precharge Time (tRPmin):13.750 ns
    Minimum Active to Precharge Time (tRASmin):32.000 ns
    Supported Module Timing at 1200.0 MHz:17-17-17-39
    Supported Module Timing at 1066.7 MHz:15-15-15-35
    Supported Module Timing at 933.3 MHz:13-13-13-30
    Supported Module Timing at 800.0 MHz:11-11-11-26
    Supported Module Timing at 666.7 MHz:10-10-10-22
    Minimum Active to Active/Refresh Time (tRCmin):45.750 ns
    Minimum Refresh Recovery Time Delay (tRFC1min):350.000 ns
    Minimum Refresh Recovery Time Delay (tRFC2min):260.000 ns
    Minimum Refresh Recovery Time Delay (tRFC4min):160.000 ns
    Minimum Four Activate Window Delay Time (tFAWmin):21.000 ns
    Minimum Active to Active Delay Time – Different Bank Group (tRRD_Smin):3.300 ns
    Minimum Active to Active Delay Time – Same Bank Group (tRRD_Lmin):4.900 ns
    Minimum CAS to CAS Delay Time – Same Bank Group (tCCD_Lmin):5.000 ns
    [Features]
    Module Temperature Sensor (TSOD):Supported
    Module Nominal Height:31 – 32 mm
    Module Maximum Thickness (Front):1 – 2 mm
    Module Maximum Thickness (Back):1 – 2 mm
    Number of Registers:2
    Heat Spreader:Not Present
    Register Manufacturer:IDT
    Register Revision:3.0
    Address Mapping from Register to DRAM:Standard


    Row: 36 [CPU1/CPU1-DIMM3] – 8 GB PC4-19200 DDR4 SDRAM SK Hynix HMA81GR7MFR8N-UH
    [General Module Information]
    Module Number:36
    Module Size:8 GBytes
    Memory Type:DDR4 SDRAM
    Module Type:Registered DIMM (RDIMM)
    Memory Speed:1200.0 MHz (DDR4-2400 / PC4-19200)
    Module Manufacturer:SK Hynix
    Module Part Number:HMA81GR7MFR8N-UH
    Module Revision:0.0
    Module Serial Number:1100878162 (52119E41)
    Module Manufacturing Date:Year: 2017, Week: 40
    Module Manufacturing Location:1
    SDRAM Manufacturer:SK Hynix
    Error Check/Correction:ECC
    [Module Characteristics]
    Row Address Bits:16
    Column Address Bits:10
    Module Density:8192 Mb
    Number Of Ranks:1
    Number Of Bank Groups:4
    Device Width:8 bits
    Bus Width:72 bits
    Die Count:1
    Module Nominal Voltage (VDD):1.2 V
    Minimum SDRAM Cycle Time (tCKAVGmin):0.83300 ns (1200 MHz)
    Maximum SDRAM Cycle Time (tCKAVGmax):1.60000 ns
    CAS# Latencies Supported:10, 11, 12, 13, 14, 15, 16, 17, 18
    Minimum CAS# Latency Time (tAAmin):13.750 ns
    Minimum RAS# to CAS# Delay (tRCDmin):13.750 ns
    Minimum Row Precharge Time (tRPmin):13.750 ns
    Minimum Active to Precharge Time (tRASmin):32.000 ns
    Supported Module Timing at 1200.0 MHz:17-17-17-39
    Supported Module Timing at 1066.7 MHz:15-15-15-35
    Supported Module Timing at 933.3 MHz:13-13-13-30
    Supported Module Timing at 800.0 MHz:11-11-11-26
    Supported Module Timing at 666.7 MHz:10-10-10-22
    Minimum Active to Active/Refresh Time (tRCmin):45.750 ns
    Minimum Refresh Recovery Time Delay (tRFC1min):350.000 ns
    Minimum Refresh Recovery Time Delay (tRFC2min):260.000 ns
    Minimum Refresh Recovery Time Delay (tRFC4min):160.000 ns
    Minimum Four Activate Window Delay Time (tFAWmin):21.000 ns
    Minimum Active to Active Delay Time – Different Bank Group (tRRD_Smin):3.300 ns
    Minimum Active to Active Delay Time – Same Bank Group (tRRD_Lmin):4.900 ns
    Minimum CAS to CAS Delay Time – Same Bank Group (tCCD_Lmin):5.000 ns
    [Features]
    Module Temperature Sensor (TSOD):Supported
    Module Nominal Height:31 – 32 mm
    Module Maximum Thickness (Front):1 – 2 mm
    Module Maximum Thickness (Back):1 – 2 mm
    Number of Registers:2
    Heat Spreader:Not Present
    Register Manufacturer:IDT
    Register Revision:3.0
    Address Mapping from Register to DRAM:Standard


    Row: 40 [CPU1/CPU1-DIMM8] – 8 GB PC4-19200 DDR4 SDRAM SK Hynix HMA81GR7MFR8N-UH
    [General Module Information]
    Module Number:40
    Module Size:8 GBytes
    Memory Type:DDR4 SDRAM
    Module Type:Registered DIMM (RDIMM)
    Memory Speed:1200.0 MHz (DDR4-2400 / PC4-19200)
    Module Manufacturer:SK Hynix
    Module Part Number:HMA81GR7MFR8N-UH
    Module Revision:0.0
    Module Serial Number:1570640210 (52119E5D)
    Module Manufacturing Date:Year: 2017, Week: 40
    Module Manufacturing Location:1
    SDRAM Manufacturer:SK Hynix
    Error Check/Correction:ECC
    [Module Characteristics]
    Row Address Bits:16
    Column Address Bits:10
    Module Density:8192 Mb
    Number Of Ranks:1
    Number Of Bank Groups:4
    Device Width:8 bits
    Bus Width:72 bits
    Die Count:1
    Module Nominal Voltage (VDD):1.2 V
    Minimum SDRAM Cycle Time (tCKAVGmin):0.83300 ns (1200 MHz)
    Maximum SDRAM Cycle Time (tCKAVGmax):1.60000 ns
    CAS# Latencies Supported:10, 11, 12, 13, 14, 15, 16, 17, 18
    Minimum CAS# Latency Time (tAAmin):13.750 ns
    Minimum RAS# to CAS# Delay (tRCDmin):13.750 ns
    Minimum Row Precharge Time (tRPmin):13.750 ns
    Minimum Active to Precharge Time (tRASmin):32.000 ns
    Supported Module Timing at 1200.0 MHz:17-17-17-39
    Supported Module Timing at 1066.7 MHz:15-15-15-35
    Supported Module Timing at 933.3 MHz:13-13-13-30
    Supported Module Timing at 800.0 MHz:11-11-11-26
    Supported Module Timing at 666.7 MHz:10-10-10-22
    Minimum Active to Active/Refresh Time (tRCmin):45.750 ns
    Minimum Refresh Recovery Time Delay (tRFC1min):350.000 ns
    Minimum Refresh Recovery Time Delay (tRFC2min):260.000 ns
    Minimum Refresh Recovery Time Delay (tRFC4min):160.000 ns
    Minimum Four Activate Window Delay Time (tFAWmin):21.000 ns
    Minimum Active to Active Delay Time – Different Bank Group (tRRD_Smin):3.300 ns
    Minimum Active to Active Delay Time – Same Bank Group (tRRD_Lmin):4.900 ns
    Minimum CAS to CAS Delay Time – Same Bank Group (tCCD_Lmin):5.000 ns
    [Features]
    Module Temperature Sensor (TSOD):Supported
    Module Nominal Height:31 – 32 mm
    Module Maximum Thickness (Front):1 – 2 mm
    Module Maximum Thickness (Back):1 – 2 mm
    Number of Registers:2
    Heat Spreader:Not Present
    Register Manufacturer:IDT
    Register Revision:3.0
    Address Mapping from Register to DRAM:Standard


    Row: 44 [CPU1/CPU1-DIMM6] – 8 GB PC4-19200 DDR4 SDRAM SK Hynix HMA81GR7MFR8N-UH
    [General Module Information]
    Module Number:44
    Module Size:8 GBytes
    Memory Type:DDR4 SDRAM
    Module Type:Registered DIMM (RDIMM)
    Memory Speed:1200.0 MHz (DDR4-2400 / PC4-19200)
    Module Manufacturer:SK Hynix
    Module Part Number:HMA81GR7MFR8N-UH
    Module Revision:0.0
    Module Serial Number:211685714 (52119E0C)
    Module Manufacturing Date:Year: 2017, Week: 40
    Module Manufacturing Location:1
    SDRAM Manufacturer:SK Hynix
    Error Check/Correction:ECC
    [Module Characteristics]
    Row Address Bits:16
    Column Address Bits:10
    Module Density:8192 Mb
    Number Of Ranks:1
    Number Of Bank Groups:4
    Device Width:8 bits
    Bus Width:72 bits
    Die Count:1
    Module Nominal Voltage (VDD):1.2 V
    Minimum SDRAM Cycle Time (tCKAVGmin):0.83300 ns (1200 MHz)
    Maximum SDRAM Cycle Time (tCKAVGmax):1.60000 ns
    CAS# Latencies Supported:10, 11, 12, 13, 14, 15, 16, 17, 18
    Minimum CAS# Latency Time (tAAmin):13.750 ns
    Minimum RAS# to CAS# Delay (tRCDmin):13.750 ns
    Minimum Row Precharge Time (tRPmin):13.750 ns
    Minimum Active to Precharge Time (tRASmin):32.000 ns
    Supported Module Timing at 1200.0 MHz:17-17-17-39
    Supported Module Timing at 1066.7 MHz:15-15-15-35
    Supported Module Timing at 933.3 MHz:13-13-13-30
    Supported Module Timing at 800.0 MHz:11-11-11-26
    Supported Module Timing at 666.7 MHz:10-10-10-22
    Minimum Active to Active/Refresh Time (tRCmin):45.750 ns
    Minimum Refresh Recovery Time Delay (tRFC1min):350.000 ns
    Minimum Refresh Recovery Time Delay (tRFC2min):260.000 ns
    Minimum Refresh Recovery Time Delay (tRFC4min):160.000 ns
    Minimum Four Activate Window Delay Time (tFAWmin):21.000 ns
    Minimum Active to Active Delay Time – Different Bank Group (tRRD_Smin):3.300 ns
    Minimum Active to Active Delay Time – Same Bank Group (tRRD_Lmin):4.900 ns
    Minimum CAS to CAS Delay Time – Same Bank Group (tCCD_Lmin):5.000 ns
    [Features]
    Module Temperature Sensor (TSOD):Supported
    Module Nominal Height:31 – 32 mm
    Module Maximum Thickness (Front):1 – 2 mm
    Module Maximum Thickness (Back):1 – 2 mm
    Number of Registers:2
    Heat Spreader:Not Present
    Register Manufacturer:IDT
    Register Revision:3.0
    Address Mapping from Register to DRAM:Standard